| 摘要 |
PROBLEM TO BE SOLVED: To realize sufficient crystal growth, and obtain a crystal whose grain diameter is large by obtaining a proper cooling speed, after heating and melting an amorphous silicon thin film. SOLUTION: Hearing or lamp-hearing an annealing chamber after laser heating and melting of an amorphous silicon thin film are carried out, and the cooling speed is made proper. Thus, a crystal whose grain diameter is large can be manufactured.
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