| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can easily reduce the size of an entire semiconductor device while maintaining the electrical connection between a circuit element on the main surface of a semiconductor substrate and a lead frame on the reverse side of the semiconductor substrate. SOLUTION: An opening 103 is formed on a first main surface 108 of a semiconductor substrate 101 where a circuit element 102 is formed by anisotropic etching. Then, a first conductive layer 104 that is extended from a second main surface 109 being exposed at the opening 103 to the circuit element 102 and is electrically connected to the circuit element 102 is formed. Then, a reverse side 110 of the semiconductor substrate 101 is shaved until the first conductive layer 104 is exposed. After that, a second conductive layer 107 is formed at the reverse side of the semiconductor substrate 101 so that it can be electrically connected to the first conductive layer 104. Then, with a region being surrounded by straight lines CD and EF in a sectional drawing and straight lines GH and IJ on a top view as a dicing line, the semiconductor substrate 101 is divided. Finally, the second conductive layer 107 is bonded to a lead frame 106.
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