SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce a dislocation defect and joint leak of a non-volatile memory where a stripe-like element separation region is formed for higher integration, for raised reliability and yield. SOLUTION: An AND type flush memory is formed on a substrate where a stripe-like element separation region 5 is formed while an active region L sandwiched between element separation regions 5 is formed in stripe as well. Here, a silicon single crystal substrate comprising nitrogen or carbon is used as a semiconductor substrate.