| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving element with less dependence on polarization of the light-receiving sensitivity, including a light-receiving portion consisting of a semiconductor multilayer structure, including a lightreceiving layer to allow the incident light to pass through the light receiving layer with a certain inclination to the thickness direction of layer. SOLUTION: In a semiconductor light-receiving element, having a laminated layer structure in which an light-absorbing layer 13 is sandwiched between an upper semiconductor layer 12 formed of one or more layers of semiconductor layer, having a refractive index smaller that of the light-absorbing layer 14 and a lower semiconductor layer 14 formed of one or more layers of semiconductor layer, having a refractive index smaller than that of the light-absorbing layer 13 and an incident beam from the lower semiconductor layer 14 passes with a inclination with respect to the thickness direction of the light-absorbing layer 13, the composition, thickness or number of layers of the light-absorbing layers are adjusted to provide the light-receiving sensitivity almost equal to that for the polarizing conditions of the incident beam in the absorbing layer of the semiconductor light-receiving element determined with total sum of reflected beams each interface of the laminated and transmitting beams.
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