| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer and a field effect transistor in which impurities being mixed into a carrier supply layer, a graded buffer layer or a buffer layer is reduced. SOLUTION: Impurities being mixed into a carrier supply layer 5, a buffer layer 2 or a Schottky contact layer can be reduced by forming any one of the buffer layer, carrier supply layer 5 or Schottky contact layer on an InAlAs/ InGaAs base semiconductor wafer of InAlGaAs. When such a semiconductor wafer is used, leakage of gate voltage is eliminated and a field effect transistor having high gate breakdown strength is obtained.
|
