| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of etching speed distribution in pretreatment etching for etching the surface of a substrate, before a thin film is generated. SOLUTION: A discharge power source 4 applies voltage to an electrode 3, and gas is discharged in a state where a gas inlet system 2 introduces gas into a pretreatment chamber 1 provided with an exhaust system 11. Thus, a plasma is formed. A self-bias voltage being negative DC voltage is given to a substrate 9 held by a substrate holder used as the electrode 3. Ions in a plasma are made incident on the surface of the substrate 9, and pretreatment etching is executed. A rotation mechanism rotated around a shaft 61A matches the center shaft, a revolving mechanism rotated around a rotation shaft 62A, which is not matching the center shaft, and an eccentric distance change mechanism changing an eccentric distance L being a distance between the rotation shaft 61A and the revolution shaft 62A, are installed in a magnet unit 5 making plasma density distribution in a face parallel to the substrate 9 uniform. A control part 60 controls the rotation speed and revolving speed and makes the pattern of the track of one point in the magnet unit 5 arbitrary.
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