发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve wiring reliability while suppressing the generation of void by improving the burial property of metal into a connection hole, preventing an oxide film from being formed on a barrier layer that is formed in the connection hole, and improving electromigration resistance. SOLUTION: The manufacturing method is provided with a process for forming a barrier layer 25 on the inner surface of a recessed part 24 (a groove 22 and a connection hole 23) being formed at an insulation film 21 on a substrate 10, a process for forming a plating seed layer 26 on the surface of the barrier layer 25 by sputtering or the like by keeping the barrier layer 25 in non-oxidation atmosphere, and a process for applying a solution 31 containing a metal particle at least in the recessed part 24. After that, the inside of the recessed part 24 is buried with a metal plating layer, thus forming wiring (second wiring 28) and a plug 29.
申请公布号 JP2001110808(A) 申请公布日期 2001.04.20
申请号 JP19990288962 申请日期 1999.10.12
申请人 SONY CORP 发明人 KOMAI HISANORI;NOGAMI TAKESHI;YAMAGISHI HAJIME
分类号 H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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