| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image sensor in which vertical charge transfer efficiency is prevented from deteriorating due to short channel effect. SOLUTION: A vertical charge transfer path 20 includes a first transfer region having one side defined by an isolation region 202, and a second transfer region having both sides defined by the isolation region wherein the first and second transfer regions are jointed at a point in the downstream of the first transfer region and a vertical charge transfer electrode 208 is disposed such that one edge part 208bE of a vertical charge transfer electrode 208b is located closely to the joint.
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