SEMICONDUCTOR DEVICE OF SOI STRUCTURE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide semiconductor devices which are of SOI structure and can be highly integrated by decreasing a distance between diodes without deteriorating them in insulation characteristics, and to provide a method of manufacturing the same. SOLUTION: A first diffusion region 128 which forms a P+/N diode and a second diffusion region 130 which forms an N+/P diode are insulated by an STI 112a at a semiconductor substrate 100a.