发明名称 METHOD AND APPARATUS FOR LIGHT IRRADIATION TREATMENT
摘要 PROBLEM TO BE SOLVED: To realize highly efficient annealing treatment and activation treatment by light irradiation, without generating bending or deformation of a TFT glass substrate. SOLUTION: ATFT substrate 5 is arranged in a first light irradiating region 2 under a metal halide lamp 1 and a second light irradiating region 4 under a halogen lamp 3, so that light irradiation can be carried out by relatively moving scanning of the light irradiating regions and the TFT substrate. The selective heating of polysilicon under the metal halide lamp combines heating of the whole TFT substrate under the halogen lamp, so that the mismatching of cooling gradient or bimetal effect of the substrate and a thin film can be removed, and bending or deformation of the substrate can be prevented.
申请公布号 JP2001110738(A) 申请公布日期 2001.04.20
申请号 JP19990288088 申请日期 1999.10.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKETOMI YOSHINAO;MORITA YUKIHIRO;NISHITANI MIKIHIKO;SHIBUYA MUNEHIRO;TERAUCHI MASAHARU
分类号 H01L21/26;H01L21/336;H01L29/786;(IPC1-7):H01L21/26 主分类号 H01L21/26
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