| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a comb-shaped horizontal DMOS FET which can increase flexibility in voltage breakdown design while preventing increase in chip area and also in the number of its manufacturing steps. SOLUTION: In the method for manufacturing a MOS FET, a drain layer, a drift channel layer, a gate electrode and a source layer from a comb shape which has a linear part, a curved tip end and a valley part, and are formed in this order sequentially from a center so as to surround their peripheries. The drift channel layer is formed in an identical step which can individually set impurity concentrations of the linear part, tip end and valley part. |
