发明名称 PROBING METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a probing device which is capable of obtaining a constant contact load even if a probe card is changed in shape with time or a distance between the tip of a probe and a wafer W varies due to expansion or shrinkage caused by a thermal influence in a check by a method wherein a main chuck whose overdrive is kept constant in a conventional device is regulated in quantity of overdrive. SOLUTION: This probing method is carried out through such a manner where a wafer placed on a main chuck 17 is brought into contact with a probe 24A under the control of a controller 13. When the main chuck is overdriven to check the electric properties of the wafer W, a load produced when a probe 24A is brought into contact with the wafer W by overdriving the main chuck 17 under the control of the controller 13 is measured through the intermediary of a pressure sensor 31 provided to the main chuck 17, and the main chuck 17 is regulated in quantity of overdrive resting on the measured load.
申请公布号 JP2001110857(A) 申请公布日期 2001.04.20
申请号 JP19990285139 申请日期 1999.10.06
申请人 TOKYO ELECTRON LTD 发明人 KOBAYASHI MASAHITO;ISHII KAZUNARI
分类号 G01L5/00;G01R1/06;G01R31/28;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01L5/00
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