发明名称 |
PROBING METHOD AND DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To obtain a probing device which is capable of obtaining a constant contact load even if a probe card is changed in shape with time or a distance between the tip of a probe and a wafer W varies due to expansion or shrinkage caused by a thermal influence in a check by a method wherein a main chuck whose overdrive is kept constant in a conventional device is regulated in quantity of overdrive. SOLUTION: This probing method is carried out through such a manner where a wafer placed on a main chuck 17 is brought into contact with a probe 24A under the control of a controller 13. When the main chuck is overdriven to check the electric properties of the wafer W, a load produced when a probe 24A is brought into contact with the wafer W by overdriving the main chuck 17 under the control of the controller 13 is measured through the intermediary of a pressure sensor 31 provided to the main chuck 17, and the main chuck 17 is regulated in quantity of overdrive resting on the measured load.
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申请公布号 |
JP2001110857(A) |
申请公布日期 |
2001.04.20 |
申请号 |
JP19990285139 |
申请日期 |
1999.10.06 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KOBAYASHI MASAHITO;ISHII KAZUNARI |
分类号 |
G01L5/00;G01R1/06;G01R31/28;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01L5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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