发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To obtain a laser beam irradiation technology, by which a good crystalline film can be obtained with high mass-productivity. SOLUTION: A method for manufacturing a semiconductor device is characterized, in that the laser light emitted from one laser is divided into two beams, and after one of the two beams is projected upon a semiconductor material through a first optical system, the other beam is projected upon the semiconductor material through a second optical system. The energy density of the second projected laser beam is made higher than that of the first projected laser beam. In addition, the two laser beams are projected upon the semiconductor material in different chambers. |
申请公布号 |
JP2001110743(A) |
申请公布日期 |
2001.04.20 |
申请号 |
JP20000264767 |
申请日期 |
2000.09.01 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD;SHARP CORP |
发明人 |
KOZAI TAKAMASA;CHO KOYU;MIYANAGA SHOJI |
分类号 |
H01L21/20;H01L21/268;H01L21/324;H01L21/336;H01L21/77;H01L29/786;(IPC1-7):H01L21/268 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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