| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with such a metallic bump electrode as a bump formed on an input/output pad which, even in the case where the pad itself or a pad pitch is reduced, the reliability of the connection of the bump electrode with external output terminals is high and the planar size of a chip is reduced. SOLUTION: An input/output pad 3 is formed on a substrate in an active region 1 with a transistor, a wiring and the like, which are formed of hierarchies, such as a diffusion layer 11, wiring layers 8, 8' and 8", contacts 9 and an interlayer insulating film 10. A surface protective film 4 on the pad 3 is opened, a barrier metal film 7 is formed of a thin film on the film 4 in a size equal with that of the pad 3 and a metallic bump electrode 6 of the size extended longer than that of the pad 3 in at least one direction is formed on the film 7. Hereby, the area of the electrode 6 is formed wider than that of the pad 3.
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