METHOD FOR FORMING OXIDE FILM, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To form an oxide film with improved quality on a semiconductor thin film containing silicon in a low-temperature process where a substrate temperature is at 600 deg.C or lower, and to provide a reliable thin-film transistor with improved performance while keeping the substrate temperature at a low temperature. SOLUTION: A catalyst element for accelerating oxidation is added to a semiconductor thin film containing silicon, heat treatment is made in oxidation atmosphere, and also the operation between oxygen radical and oxygen ion is utilized, thus forming an oxide film with improved quality on the semiconductor thin film containing silicon in a low-temperature process where the substrate temperature is at 600 deg.C or less.