发明名称 TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a treatment method for reducing the contact resistance, while maintaining a state after treatment to be satisfactory even in fine holes and narrow parts. SOLUTION: In this treatment method, an organic substance and particles which are stuck to an object to be treated, are cleaned with ammonia SC-1 liquid, the mixed gas of N2 gas and H2 gas is activated by a plasma, and activated gas species is formed. NF3 gas is added to the down flow of the activated gas spices and NF3 is activated. The activated gas species of formed NF3 is exposed to the surface of the object to be treated and it is reacted with a natural oxide film so as to form a generated film. Thus, the generated film is vaporized by heating the object to be treated to a prescribed temperature.
申请公布号 JP2001110785(A) 申请公布日期 2001.04.20
申请号 JP19990289693 申请日期 1999.10.12
申请人 TOKYO ELECTRON LTD 发明人 KOBAYASHI YASUO;YOSHIOKA MASAO
分类号 H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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