SEMICONDUCTOR DEVICE AND FORMATION OF INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To realize a silicon oxide/nitride film having a large dielectric constant and a small leak current. SOLUTION: At the time of nitrifying a silicon surface with nitrogen monoxide, a reducing gas such as a carbon monoxide gas is added for film formation simultaneously therewith. Accordingly, there can be realized an oxide/nitride film which has 20% or more of nitrogen atoms with respect to the number of oxygen atoms in the film.