| 摘要 |
<p>PROBLEM TO BE SOLVED: To offer a method of manufacturing a high-quality photoelectric conversion device stably and precisely by executing laser scrubbing of some kinds of thin films formed on a substrate with good workability and a higher variance. SOLUTION: Splitting of a first electrode layer is executed by using one of a fundamental harmonic, a second higher harmonic and a third higher harmonic of a YAG laser. Opening of an opening for junction of semiconductor layers is executed by using the second or the third higher harmonic. Splitting of a second electrode layer is executed by using the second or the third higher harmonic. A first electrode layer of a marginal part of a substrate, the semiconductor layer, and the second electrode layer are removed partially by using the second or third higher harmonic of the YAG laser. At least, one of processes for the layers is executed by using the third higher harmonic of the YAG laser.</p> |
