| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve problems where the LDD region of a crystal Si thin-film transistor is damaged since the LDD region is formed by injecting impurities, a conventional LDD process is complex since the LDD process includes many impurity injection processes, and costs may also be increased by the hydrogenating process of a polycrystalline Si. SOLUTION: A fixed charge with a sign opposite to that of the conductive type of a channel part is introduced into a side wall being formed by an insulating film on the side of a gate electrode for inducing a carrier in a polycrystalline Si region at the lower part of the side wall, and resistance is reduced for effectively forming an LDD region without injecting impurities into a polycrystalline Si film. Also, the insulating film for forming a side wall is formed in atmosphere including hydrogen, nitrogen, or both of them for effectively achieving a hydrogenation process.</p> |
