发明名称 SOLID STATE IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To solve the problem of a conventional VP-CCD that the resolution can not be enhanced at low cost. SOLUTION: A transfer electrode film is formed on one surface of a semiconductor substrate through an electric insulation film and a large number of openings are made in a plurality of rows and columns in the transfer electrode film. Openings in the even column are shifted, in the column direction, from openings in the odd column by about one half of the pitch of openings in the column and openings in the even row are shifted, in the row direction, from openings in the odd row by about one half of the pitch of openings in the row. Furthermore, each column is provided with a charge transfer channel having first potential wells formed beneath the openings and first potential barriers disposed contiguously to the first potential wells on the upstream side thereof.
申请公布号 JP2001111025(A) 申请公布日期 2001.04.20
申请号 JP19990287333 申请日期 1999.10.07
申请人 FUJI FILM MICRODEVICES CO LTD;FUJI PHOTO FILM CO LTD 发明人 KAWAJIRI KAZUHIRO;MASUKANE KAZUYUKI
分类号 H01L27/14;H01L27/148;H04N5/335;H04N5/341;H04N5/369;H04N5/3725;H04N5/376;H04N9/07;(IPC1-7):H01L27/148 主分类号 H01L27/14
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