| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, characterized in that when a BCB film which is an interlayer insulating layer is dry- etched, it is etched in an anisotropic shape at a high selective ratio with respect to an etching mask of SiO2 or SiN, without an underlying metal wiring becoming thin or the etched-away substance being attached again to a sidewall to produce satisfactory contact characteristics. SOLUTION: An underlying insulation layer 1, a lower metal wiring 2, having a TiN layer 2a on the surface, a BCB film 3, a SiN film 4a are formed sequentially (a). A photoresist film 5 is formed through lithography, and the SiN film 4a is patterned by a RIE to form an insulation film mask 4 (b). The BCB film 3 is dry-etched, using a Cl2/BCl3/O2 gas and the insulation film mask 4 to form a through hole 6 (c). Then, an upper wiring, having a contact metal layer 7 comprising a Ti/Pt/Au sputtered film and an Au-plated film 8 (d) is formed.
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