SEMICONDUCTOR WAFER WITH ANISOTROPIC CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a joined body of an anisotropic conductive film and a semiconductor wafer as a body of structure which suppresses warp ages. SOLUTION: An anisotropic conductive film 1 is bonded on a circuit surface 3a of a semiconductor wafer 3, and a suppressor layer 2 for suppressing the warpage of the whole semiconductor wafer, which may be caused by a heat expansion of the anisotropic conductive film 1 is bonded on a rear surface 3b of the semiconductor wafer 3. The suppressor layer 2 is provided for suppressing the warpage of the whole semiconductor wafer by resisting expanding and contracting force of the anisotropic conductive film 1 caused by the change in temperature. The suppressor layer itself generates expanding and contracting force corresponding to the change in temperature.