| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a diffusion region with low resistance, acceptable defect density, reliability, and process control in a silicon substrate. SOLUTION: The method includes three stages (a), (b), and (c). In the stage (a), first ion implantation is made in a silicon substrate. The stage (a) is executed under conditions where the region of Si being changed into amorphousness is formed in the silicon substrate. In the stage (b), second ion implantation is made in the silicon substrate including the region of Si being changed into amorphousness. The stage (b) is executed by implanting a dopant ion into the silicon substrate under conditions where a second ion implantation peak exists in the region of Si being changed into amorphousness. In the stage (c), the silicon substrate is annealed under conditions where the region of Si being changed into amorphousness is crystallized again, thus including a stage for forming a diffusion region in the silicon substrate.
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