| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-power transistor as a switch element that can be operated speedily. SOLUTION: The bipolar transistor is provided with a base electrode where an emitter layer is partially missing and metal is bonded to a part in that a base layer is exposed, and an emitter electrode where metal is bonded to a part where no emitter layers are missing. Also, the base layer is made of SiGe that has specific thickness and specific Ge content by percentage.
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