| 发明名称 |
METHOD FOR REMOVING RESIDUE BY VIA ETCHING |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing residue after via etching, by a dry cleaning system. SOLUTION: The via hole of an integrated circuit, having residues on a side wall, is exposed to a plasma comprising oxygen and gas containing fluorine. It is cleaned with water, and the residue is removed.
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| 申请公布号 |
JP2001110786(A) |
申请公布日期 |
2001.04.20 |
| 申请号 |
JP19990291298 |
申请日期 |
1999.10.13 |
| 申请人 |
PROMOS TECHNOLOGIES INC;MOSEL VITELIC INC;SIEMENS AG |
发明人 |
RIN ISHI;O SEIMEI;CHO KORYU;CHO MOKUSON |
| 分类号 |
H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
| 代理机构 |
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