| 发明名称 |
Ein Verfahren zur Herstellung eines epitaktischen Halbleitersubstrats |
| 摘要 |
A semiconductor epitaxial substrate comprises a GaAs single-crystal substrate having thereon an InyGa(1-y)As (0<y</=1) crystal layer as a channel layer. The composition and the thickness of the InyGa(1-y)As layer are chosen to be within the elastic deformation limits of crystals constituting the InyGa(1-y)As layer and in the vicinity of the InyGa(1-y)As layer. The semiconductor epitaxial substrate further comprises a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width of from the bandgap width of GaAs to the bandgap width of the electron donating layer. |
| 申请公布号 |
DE69425703(T2) |
申请公布日期 |
2001.04.19 |
| 申请号 |
DE1994625703T |
申请日期 |
1994.06.28 |
| 申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
HATA, MASAHIKO;FUKUHARA, NOBORU;TAKATA, HIROAKI;INUI, KATSUMI |
| 分类号 |
H01L21/203;H01L21/205;(IPC1-7):H01L21/203;H01L29/80 |
主分类号 |
H01L21/203 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
