| 摘要 |
<p>A method is provided for manufacturing a semiconductor device, the method including forming an ionized metal plasma titanium (IMP-Ti) layer (1020) as a first barrier layer (220) within an opening (210), forming the first barrier layer (220) to have a thickness in a range of approximately 100-200 Å. The method also includes forming a first chemical vapor deposition titanium nitride (CVD-TiN) layer (1140) as the second barrier layer (240) above and adjacent the first barrier layer (220) within the opening (210), forming the second barrier layer (240) to have a thickness of at least approximately 53 Å.</p> |
