Structuring a metal layer during semiconductor finishing comprises applying a lacquer layer to a semiconductor substrate, structuring and producing an etching mask and structuring the metal layer using the mask

摘要

Structuring a metal layer (M) during semiconductor finishing comprises applying a lacquer layer (L) to a semiconductor substrate; structuring the lacquer layer using lithography and producing an etching mask; and structuring the metal layer using the mask. Initially a hard mask is applied to the metal layer and the lacquer layer is applied to the mask, where the lacquer layer is thin so that only the mask and not the metal layer can be structured with the aid of the lacquer layer. The hard mask is structured to form an etching mask with the aid of the structured lacquer layer. The metal layer is structured with the hard mask as an etching mask. Preferred Features: The hard mask has a first layer (H1) of an oxide, preferably silicon dioxide, and a second layer (H2) to reduce reflection and made of silicon nitride. The metal layer is made of aluminum and/or copper.