METHOD FOR MANUFACTURING SOI WAFER, AND SOI WAFER

摘要

A method of manufacturing an SOI wafer by hydrogen ion separation, comprising the steps of bonding a base wafer to a bond wafer having a minute bubble layer formed by implanting gas ions and separating the wafer having the SOI layer by using the minute bubble layer as the boundary, the method characterized by further comprising the steps of heating the SOI wafer having the SOI layer by a rapid heating/cooling apparatus (RTA) and heating the SOI wafer by a batch furnace in the atmosphere containing hydrogen or argon, after the separation step. Preferably, the heating by the rapid thermal apparatus is performed firstly. The surface roughness of the SOI layer separated by the hydrogen ion separation from a short period to a long period is improved, and the SOI wafer free from pits caused by COPs in the SOI layer is efficiently manufactured with high throughput.