摘要 |
<p>A non-volatile memory based on a unique EEPROM memory. The non-volatile memory includes a plurality of data memory cells (20), a data programming circuit, and a first data line. Each data memory cell (20) includes an EEPROM cell having a separate programming electrode (26) and the programming electrode (26) is coupled to the floating gate (23) by a tunneling window (25).</p> |