发明名称 Optoelectronic material, device using the same and method for manufacturing optoelectronic material
摘要 This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.
申请公布号 US2001000335(A1) 申请公布日期 2001.04.19
申请号 US20000725486 申请日期 2000.11.30
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO. 发明人 YAMADA YUKA;YOSHIDA TAKEHITO;TAKEYAMA SHIGERU;MATSUDA YUJI;MUTOH KATSUHIKO
分类号 H01L21/203;B01D53/78;H01L31/18;H01L33/00;H01L33/18;H01L33/26;(IPC1-7):H01L21/00;H01L21/00;H01L31/12;H01L27/15 主分类号 H01L21/203
代理机构 代理人
主权项
地址