SPUTTERING TARGET AND METHOD FOR PREPARING THE SAME AND FILM-FORMING METHOD

摘要

A sputtering target which comprises SiC and metallic Si and has an atomic ratio of C to Si of 0.5 to 0.95 and a density of 2.75 x 10<3> kg/ m<3> to 3.1 x 10<3> kg/m<3>; a method for preparing the target; and a method for forming a film comprising SiO2 as a main component using the target. The method can be employed for forming a film comprising SiO2 having a low refractive index with a high forming rate.