BISTABLE LIGHT EMITTING DEVICES

摘要

A light emitting device is described which has stable conducting and nonconducting states to provide internal memory for use primarily in matrix arrays. The device comprises a three layer structure of an n-type region of GaP or AlxGa1-xP, a semi-insulating region of GaP or AlxGa1-xP, and a region of p-type GaP. The semi-insulating region is doped with a deep level impurity compensated by a shallow level impurity, which impurities are chosen to provide good trapping centers for injected carriers but weak recombination centers. The P-type region is doped with impurities which will permit recombination therein for efficient luminescence in the conducting state.