| 摘要 |
<p>A sputtering target which comprises SiC and metallic Si and has an atomic ratio of C to Si of 0.5 to 0.95 and a density of 2.75 x 10?3 kg/ m3¿ to 3.1 x 103 kg/m3; a method for preparing the target; and a method for forming a film comprising SiO¿2? as a main component using the target. The method can be employed for forming a film comprising SiO2 having a low refractive index with a high forming rate.</p> |
