发明名称 METHOD AND APPARATUS FOR ETCHING AND DEPOSITION USING MICRO-PLASMAS
摘要 Plasma etching or deposition is performed over substrates using spatially localized micro-plasmas operating in parallel with each other. A plasma generating electrode is positioned closely adjacent to an exposed surface of the substrate, as on the surface of a dielectric layer applied to the substrate. A selected pressure of the gas in the region of the electrode and the substrate is established, and a voltage is applied between the plasma generating electrode and the substrate or a second electrode to ignite a plasma in the region between the plasma generating electrode and the substrate for a selected period of time. This plasma is limited to the region of the plasma generating electrode adjacent to the exposed surface so that the substrate is plasma treated in a desired pattern.
申请公布号 WO0127969(A1) 申请公布日期 2001.04.19
申请号 WO2000US28083 申请日期 2000.10.11
申请人 WISCONSIN ALUMNI RESEARCH FOUNDATION 发明人 GIANCHANDANI, YOGESH, B.;WILSON, CHESTER, G.
分类号 H01J37/32;(IPC1-7):H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项
地址