发明名称 |
UNIVERSAL SEMICONDUCTOR WAFER FOR HIGH-VOLTAGE SEMICONDUCTOR COMPONENTS |
摘要 |
A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones of a second, opposite conductivity type are embedded in the interface region between the semiconductor substrate and the at least one layer. The floating semiconductor zones are dimensioned such that the dimension of a semiconductor zone is do small compared to the layer thickness of the at least one semiconductor layer and is essentially equal to or less than a distance between the floating semiconductor zones in the interface region. |
申请公布号 |
EP1092238(A1) |
申请公布日期 |
2001.04.18 |
申请号 |
EP19990915461 |
申请日期 |
1999.02.08 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TIHANYI, JENOE;PLOSS, REINHARD |
分类号 |
H01L29/744;H01L21/18;H01L21/205;H01L21/22;H01L21/261;H01L21/265;H01L21/329;H01L21/331;H01L21/336;H01L29/06;H01L29/167;H01L29/40;H01L29/739;H01L29/78;H01L29/861;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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