| 摘要 |
Disclosed are a semiconductor light emitting element whose temperature characteristics are compensated for so as to provide a stable temperature characteristics in a temperature range from -40 DEG C to +85 DEG C, and an optical fiber transmission system using the same semiconductor light emitting element. In the semiconductor light emitting element, an active layer (2) is buried on an n-type InP semiconductor substrate (1) formed with an n-side electrode (21). The upper layers (4, 5) are covered with an insulating film (22). A p-side electrode (20) is formed on the uppermost layer of the semiconductor substrate so as to cover the insulating film (22). A relatively large metallic resistance element (30) whose resistance increases with increasing temperature is wired on the insulating film (22) as a shunt path, so as to compensate for the temperature characteristics of the semiconductor light emitting element. Therefore, since leakage current is large at a low temperature, the threshold current is high, so that the slope efficiency is small. On the other hand, since leakage current is reduced at a high temperature, a rise in the threshold current and a drop of the slope efficiency can be both compensated for. <IMAGE> |
