| 摘要 |
Since the capacitor of the semiconductor memory has the storage electrode comprising a shape of the cylindrical structure having rough polysilicon portions on base and sidewall portions thereof, it can increase electrostatic capacitance. Further, since the rough portions of the base and sidewall rough storage electrode layers are respectively formed by independently controlling a condition of Chemical Vapor Deposition, it can easily control formations of the rugged portions of the capacitor, therefore it can achieve the improvement of the productivity of the rough portions. Accordingly, the semiconductor can achieve a stability of a memory operation.
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