| 摘要 |
PROBLEM TO BE SOLVED: To produce an epitaxial wafer low in the epitaxial defect density. SOLUTION: (1) A method for producing an epitaxial wafer comprises using a silicion single crystal wafer which is doped with nitrogen and contains oxygen in a concentration of <=9×1017 atom/cm3 in an OSF ring area. (2) A method for producing an epitaxial wafer comprises using a silicon single crystal wafer which is doped with nitrogen and is grown so that the inner diameter of an OSF ring area is >=85% of the diameter of the wafer. (3) A method for producing an epitaxial wafer comprises using a silicon single crystal wafer which is doped with nitrogen in a concentration of >=1×1012 and <=1×1014 atom/cm3 and is grown with a pulling-up velocity of >=1.2 mm/min. (4) A method for producing an epitaxial wafer comprises growing an epitaxial layer after heat treating a silicon single crystal wafer at 1,200 to 1,300 deg.C for at least 1 min, which wafer is grown while doping nitrogen in a concentration of >=1×1012 and <=1×1014 atom/cm3.
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