发明名称 |
Method for contact anneal in a doped dielectric layer without dopant diffusion problem |
摘要 |
A method for annealing a contact in a doped dielectric layer without the occurrence of dopant diffusion problem by depositing a sacrificial barrier layer of oxide material in the contact opening which is capable of preventing diffusion of dopant ions into the contact opening during a high temperature reflow process for the doped dielectric layer and followed by a deposition of an electrically conductive metal into the contact opening.
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申请公布号 |
US6218289(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19990241960 |
申请日期 |
1999.02.02 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
WU KUO-CHANG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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