发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
The present invention provides a semiconductor device which includes trench-type element isolation which performs accurate alignment without deteriorating a device capability, and a method of manufacturing such a semiconductor device. Since a dummy gate electrode (14A) is formed in an edge proximity region of a trench (10A), a structure which does not create an etching remainder is realized. In addition, since a height difference is provided in a surface of the dummy gate electrode (14A) in such a manner that the height difference reflects a preliminary height difference between a surface of a silicon oxide films (2A) and a surface of a silicon substrate (1), it is possible to use the dummy gate electrode itself (14A) as an alignment mark.
|
申请公布号 |
US6218262(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19980200469 |
申请日期 |
1998.11.27 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUROI TAKASHI;SAKAI MAIKO;HORITA KATSUYUKI;SAYAMA HIROKAZU |
分类号 |
H01L21/76;H01L21/027;H01L21/3213;H01L21/762;H01L21/8242;H01L23/544;H01L27/108;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|