发明名称 UPPER STRUCTURE OF SILICON SINGLE CRYSTAL PULLING-UP DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent dust generated at a sliding part of a wire or the like, in a head chamber from intruding into a main chamber. SOLUTION: A silicon single crystal rod 11 is pulled up from a silicon molten liquid in a main chamber 12 while being rotated by a wire 13 and the wire is wound up by a wire winding mechanism 14. The wire winding mechanism 14 is accommodated in a head chamber 16 and the head chamber 16 communicates with the main chamber 12. A sucking port 33a of a vacuum pump 33 for the chambers is connected to a communicating hole 15a provided at the main chamber side, or the sucking port 33a of the vacuum pump 33 for the heat chamber is connected to a communicating hole 16b provided at the head chamber side. Thus, the vacuum pump 33 sucks the dust in the head chamber 16 through the communication hole 15a provided at the main chamber side or the communication hole 16b provided at the head chamber side and discharges the dust. The supplying amount of an inert gas is controlled to be larger than the sucking amount of the vacuum pump 33 so that the degree of the vacuum in the main chamber 12 becomes lower than the degree of the vacuum in the communicating hole 15a or 16b.
申请公布号 JP2001106589(A) 申请公布日期 2001.04.17
申请号 JP19990282649 申请日期 1999.10.04
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 HORI KENJI
分类号 H01L21/208;C30B15/00;C30B29/06;(IPC1-7):C30B15/00 主分类号 H01L21/208
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