| 摘要 |
An improved sense amplifier for accessing data stored in a flash memory or other memory, wherein the improvement consists of adding a variable impedance switch transistor to a conventional sense amplifier having a fixed impedance. The switch transistor has a low impedance for fast settling of charge during the pre-charge state of the flash memory, and has a high impedance during the sensing state of the flash memory for achieving a high gain and thus faster access of stored data than conventional sense amplifiers. The present invention also provides for better matching of sense amplifier transistors, thereby decreasing variations in performance between different transistors.
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