| 发明名称 |
Method of forming a conducting structure |
| 摘要 |
The method of forming a conducting structure consists in applying to a substrate a 2 to 20 nm thick layer of a material transformable into conducting one under the effect of radiation, and irradiating the layer of the material with a modulated beam of charged particles, with the result that the material of the layer on each irradiated area thereof is transformed into a conducting component forming on the substrate a plurality of conducting structure elements, and a nonconducting component which is displaced into the substrate material.
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| 申请公布号 |
US6218278(B1) |
申请公布日期 |
2001.04.17 |
| 申请号 |
US19990316532 |
申请日期 |
1999.05.21 |
| 申请人 |
OBSCHESTVO S OGRANICHENNOI OTVETSTVENNOSTJU "LABORATORIA IONNYKH NANOTEKHNOLOGY" |
发明人 |
GUROVICH BORIS ARONOVICH;DOLGY DMITRY IOSIFIVICH;VELIKHOV EVGENY PAVLOVICH;KULESHOVA EVGENIA ANATOLIEVNA;ARONZON BORIS ARONOVICH;MEILIKHOV EVGENY ZALMANOVICH;RYAZANTSEV EVGENY PETROVICH;RYLKOV VLADIMIR VASILIEVICH;PRIKHODKO KIRILL EVGENIEVICH;DOMANTOVSKY ALEXANDR GRIGORIEVICH;SHTROMBAKH YAROSLAV IGOREVICH;OLSHANSKY EVGENY DMITRIEVICH |
| 分类号 |
H01L21/263;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/263 |
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