| 摘要 |
A DMOS device structure includes a lightly doped semiconductor layer of a first conductivity type, a plurality of lightly doped semiconductor regions of a second conductivity type extending from a top surface of the lightly doped semiconductor layer thereinto, source regions of the first conductivity type contained in the lightly doped semiconductor regions and defining channel regions. The lightly doped semiconductor regions are contained in respective enhancement regions of the lightly doped semiconductor layer of the same conductivity type as, but with a lower resistivity than, the lightly doped semiconductor layer.
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