| 摘要 |
A method has been provided for improving the adhesion of Cu to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The diffusion barrier material is exposed to either a reactive gas species, or a plasma containing a reactive gas. By removing contaminants on the surface of the diffusion barrier, and forming weak molecular bonds between the diffusion barrier surface and the reactive gas, the diffusion barrier surface is protected and prepared for Cu adhesion. Cu, breaking the bonds between the reactive gas and diffusion barrier surface, readily bonds to the diffusion material for improved adhesion between surfaces. The diffusion barrier surface, prepared with the reactive gas, allows the IC to be stored, delaying the Cu deposition to more convenient times in the IC fabrication process. An Cu conductor interface adhered to the diffusion barrier of an integrated circuit is also provided.
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