| 摘要 |
PURPOSE:To reduce the cost by reduction in the number of masking processes and then improve the yield by a method wherein metal wiring is performed by the lift-off method by using the mask process of contact. CONSTITUTION:After a gate electrode wiring 2 is selectively formed on an insulator substrate 1 made of glass, quartz, ceramics, or the like, a gate insulation film 3 is deposited over the entire surface. For example, an Si oxide film, Si nitride film, Al oxide film, their mixture, or the like is deposited as the gate insulation film. A source electrode wiring 4 and a drain electrode 5 used also as a display electrode are formed. A conductive film transparent to visual light is used for these electrodes, e.g. Ind-Sn oxide or Sn oxide is suitable. An a-Si film 6 and a photo shielding film 7 are continuously deposited and left in a desired shape, and a surface protection film 8 is deposited as required; thereafter, the contact 91 to lead out the source wiring and the gate wiring is bored with a resist 19 as a mask. Then, part of the source and gate wirings and the other wirings as required are completed by selective formation of metallic films.
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