发明名称 CVD FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To remove the disadvantage in the conventional CVD film deposition system that much time and labor are required in the course of the disassembly, cleaning and reoperation of the system in the case where adhering matter is deposited on a discharge nozzle (slit) part and a suction nozzle (slit) part for gases of film deposition materials. SOLUTION: The CVD film deposition system is used for blowing one or more gases for film deposition onto a traveling heated substrate by means of atmospheric pressure CVD to deposit a film by the thermal decomposition of the gases. The system consists of a gas supply section, a gas-discharge-port-forming section provided to the gas supply section and having a gas discharge port for spraying gases onto a substrate and forming a film, a gas discharge section for discharging the gases after film deposition out of the system, provided in a manner to be contiguous to the gas supply section in the longitudinal direction of film deposition and a gas-suction-port- forming section provided in the gas discharge section and having a gas suction port for introducing the gases after film deposition into the gas discharge section.The above gas-discharge-port-forming section and the above gas-suction-port-forming section are detachably provided to the gas supply section and to the gas discharge section, respectively.
申请公布号 JP2001107247(A) 申请公布日期 2001.04.17
申请号 JP19990283659 申请日期 1999.10.05
申请人 CENTRAL GLASS CO LTD 发明人 WASEDA RYUTA;UENO YASUSHI
分类号 C23C16/455;(IPC1-7):C23C16/455 主分类号 C23C16/455
代理机构 代理人
主权项
地址