发明名称 |
Photodiode with buffer layer |
摘要 |
A half-transmittance photodiode usable as a photodetector in receivers for "ping-pong transmission" is improved in temperature characteristic, so that a half-transmittance photodiode usable at low temperatures is available. A p-n junction is formed in a buffer layer, not in an absorption layer.
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申请公布号 |
US6218684(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19980206156 |
申请日期 |
1998.12.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KUHARA YOSHIKI;IGUCHI YASUHIRO;SAITO TADASHI;TERAUCHI HITOSHI |
分类号 |
H01L31/10;H01L31/109;(IPC1-7):H01L31/072;H01L31/032;H01L31/033 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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