| 摘要 |
A first amorphous silicon layer is formed to connect to a portion of a capacitor contact plug, and then a second amorphous silicon layer and a third amorphous silicon layer are formed thereon. The first and the third amorphous silicon layers are formed so that they have a lower impurity concentration than that in the second amorphous silicon layer. HSG (hemispherical grain) is grown on surfaces of the first and the third amorphous silicon layers, and subsequently an impurity is diffused from the second amorphous silicon layer to the HSG. In such a method for producing a capacitor, the size of the HSG can be appropriately and uniformly controlled, and depletion in the HSG is prevented.
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